BUZ900P - 晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

The BUZ900P is a N-channel enhancement-mode Power MOSFET offers 160V drain source voltage and 8A continuous drain current. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·Integral protection diode\n·BUZ905P complimentary P-channel;

N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

N?밅HANNEL POWER MOSFET

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PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

Ultra High Sensitivity Gateable Photon Counting Module

Description The Photon Counting Head MP 900 series is designed for applications in all fields of single photon detection, e.g. chemoluminescence, bioluminescence, in-vitro assay, environmental measurements or pure research. It is an easy to use module, containing the Channel Photomultiplier, a hi

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

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