N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

BUZ900 - 晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

The BUZ900 is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·±14V Gate to source voltage\n·8A Body drain diode current\n·1°C/W Thermal resistance, junction to case;

N-channel power MOSFET for audio applications, 160V

Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3

N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS= 160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP &am

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE

N?밅HANNEL POWER MOSFET

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PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

Ultra High Sensitivity Gateable Photon Counting Module

Description The Photon Counting Head MP 900 series is designed for applications in all fields of single photon detection, e.g. chemoluminescence, bioluminescence, in-vitro assay, environmental measurements or pure research. It is an easy to use module, containing the Channel Photomultiplier, a hi

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

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