N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

BUZ901 - 晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The BUZ901 is a 200V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·±14V Gate to source voltage\n·8A Body drain diode current\n·1°C/W Thermal resistance, junction to case;

N-CHANNEL POWER MOSFET

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N-channel power mosfet

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N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP &am

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

BUZ901P - 晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The BUZ901P is a 200V N-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications. ·High energy rating\n·50ns Turn-off time\n·100ns Turn-on time;

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE

isc N-Channel MOSFET Transistor

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VHF variable capacitance diode

DESCRIPTION The BB901 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 APPLICATIONS • Electronic tuning in satellite tuners • Tunabl

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

5.0 mm Blue Series

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