P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

BUZ906P - 晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V

The BUZ906P is a P-channel enhanced mode Power MOSFET with high speed switching and high energy rating. ·Integral protection mode\n·Semefab designed and diffused;

P-CHANNEL POWER MOSFET

POWER TRANSISTORS(15A,90W)

Integrated Circuit Dual, High Frequency, Differential Amplifier

Description: The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent differential amplifiers with associated constant–current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general–purpose devices which e

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages