位置：首页 > IC中文资料第6418页 > BUZ35
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ35 | main ratings Description SIPMOS, N-channel, enhancement mode | SIEMENS 西门子 |   | |
BUZ35 | SOA is Power Dissipation Limited DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring | ISC 无锡固电 | | |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching tran | Intersil | | ||
main ratings 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
main ratings SIPMOS Power Transistor (N channel Enhancement mode) | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
main ratings Description SIPMOS, N-channel, enhancement mode | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
Enhancement mode N channel Enhancement mode Avalanche-rated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.1A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | |
BUZ35产品属性
- 类型
描述
- 型号
BUZ35
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
main ratings
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-3P |
90500 |
||||
INFINEON/英飞凌 |
24+ |
TO 3P |
160345 |
明嘉莱只做原装正品现货 |
|||
PHI |
24+ |
TO-3 |
22055 |
郑重承诺只做原装进口现货 |
|||
INF |
23+ |
TO-218 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
INFINEON/英飞凌 |
22+ |
TO-3P |
100000 |
代理渠道/只做原装/可含税 |
|||
西门子 |
24+ |
NA/ |
3440 |
原装现货,当天可交货,原型号开票 |
|||
SEMTECH |
23+ |
TO220 |
12000 |
全新原装假一赔十 |
|||
INFINEO |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
西门子 |
25+ |
TO-218 |
190 |
原装正品,假一罚十! |
|||
SIEM |
24+/25+ |
230 |
原装正品现货库存价优 |
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