| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ351 | 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching tran | INTERSIL | ||
BUZ351 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | ||
BUZ351 | main ratings 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET | SIEMENS 西门子 | ||
BUZ351 | main ratings | INFINEON 英飞凌 | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur | STMICROELECTRONICS 意法半导体 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum | NTE | |||
Square Type 文件:30.74 Kbytes Page:1 Pages | PANASONIC 松下 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
26+ |
TO-3P |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
PHI |
17+ |
TO-3P |
31518 |
原装正品 可含税交易 |
|||
XI.M.Z |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
恩XP |
18+ |
TO-3P |
41200 |
原装正品,现货特价 |
BUZ351芯片相关品牌
BUZ351规格书下载地址
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BUZ351数据表相关新闻
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深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
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