11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Features

• 11.5A, 400V

• rDS(ON) = 0.400Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”