isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.1A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357DX contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz. The BYM357DX series is

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357X contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz The BYM357X series is supplied

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Silicon epitaxial planer type

Silicon epitaxial planar type For CATV tuner ■ Features • Large capacitance ratio • Small series resistance rD

Silicon epitaxial planer type

Silicon epitaxial planar type For CATV tuner ■ Features • Large capacitance ratio • Small series resistance rD