SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.1A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

7/8 diameter single turn

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

(22.2 mm) Conductive Plastic Potentiometer, Bushing Mount Type

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

5x7mm Low Cost Surface Mount VCXO

♦ Frequency Stability to ±20 PPM ♦ +3.3Vdc or +5.0Vdc Operation ♦ HCMOS Output ♦ Operating Temperature to –40°C to +85°C ♦ Output Enable Standard ♦ Tape & Reel Packaging ♦ Pb Free

3M??Power Clamp Branch Connector

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Silver Oxide Batteries

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