型号 功能描述 生产厂家 企业 LOGO 操作

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor(N Channel)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor(N Channel)

• N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

ISC

无锡固电

Easy driver for cost effective application

文件:65.67 Kbytes Page:2 Pages

ISC

无锡固电

Power Transistor

文件:220.35 Kbytes Page:4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

SIPMOS Power Transistor(N Channel)

Infineon

英飞凌

SIPMOS Power Transistor(N Channel)

Infineon

英飞凌

BUZ33产品属性

  • 类型

    描述

  • 型号

    BUZ33

  • 制造商

    Infineon Technologies AG

  • 功能描述

    MOSFET N TO-218

更新时间:2025-12-26 15:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+
TO-3P
18000
原厂直接发货进口原装
INFINEON
24+
TO-218
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
23+
380
ADI
23+
TO-218
7000
ADI
23+
TO-218
8000
只做原装现货
INFINEON
22+
TO-218
20000
公司只有原装 品质保证
PHI
24+
NA
6000
只做原装正品现货 欢迎来电查询15919825718
西门子
23+
40500
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON
24+
P-TO218-3-1
8866
SIEMENS
24+/25+
30
原装正品现货库存价优

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