isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

Advanced PLL HCMOS VCXO

Features  Ceramic Surface Mount Package  Low Phase Jitter Performance, 600fs Typical  Advanced PLL Design w/ Low Fundamental Crystal  Frequency Range 10 – 250MHz *  +2.5V or +3.3V Operation  Output Enable Standard  Tape and Reel Packaging, EIA-418 Applications  Broadcast Video Sys

T-1 3/4 STANDARD MIDGET GROOVE

文件：335.2 Kbytes Page：1 Pages

Wiha T-handle Hex Tools

文件：261.579 Kbytes Page：1 Pages

Work horse clamp with increased performance and flexibility

文件：97.97 Kbytes Page：2 Pages

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages