isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

5-Amp Adjustable Regulators

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5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages