isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor(N Channel)

• N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor(N Channel)

SIPMOS Power Transistor(N Channel)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.

Direct Drive Voice/Dual Tone Melody Controller?

INTRODUCTION SNC353 is a 1-channel voice synthesizer and dual-tone melody IC with PWM direct drive circuit. It built-in a 4-bit tiny controller with one 4-bit input port and two 4-bit I/O ports. By programming through the tiny controller in SNC353, user’s varied applications including voice secti

RS-232/RS-485 Multi-Mode Serial Transceiver

DESCRIPTION… The SP332 is a monolithic device that contains both RS-232 and RS-485 line drivers and receivers. The configuration of the SP332 can be changed at any time by changing the logic state of two control input pins. The device also includes a loop back function which internally connects