isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor control and drive · Battery management · Genaral Power Switching

N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.03 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC

SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

High input impedance

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • SOA is Power Dissipation Limited • High input impedance APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bip

N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET??MOSFET

N - CHANNEL50V - 0.03Q - 33A TO-220 STripFET™ MOSFET ■ TYPICAL Ros(on) = 0.03Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID ANDRELAY DRIVERS ■ REGULATORS ■ DC-DC &

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件：323.03 Kbytes Page：7 Pages

N 沟道功率 MOSFET 50V，30A，40mΩ

SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIPMOS짰 Power Transistor

SIPMOS Power Transistor Product Summary Drain source voltage VDS 55V Drain-Source on-state resistance RDS(on) 0.01Ω Continuous drain current ID 80A Features • N channel • Enhancement mode • Avalanche rated • dv/dtrated • 175 ˚C operating temperature

SIPMOS짰 Power Transistor

SIPMOS Power Transistor Product Summary Drain source voltage VDS 55V Drain-Source on-state resistance RDS(on) 0.01Ω Continuous drain current ID 80A Features • N channel • Enhancement mode • Avalanche rated • dv/dtrated • 175 ˚C operating temperature

SIPMOS짰 Power Transistor

SIPMOS Power Transistor Product Summary Drain source voltage VDS 55V Drain-Source on-state resistance RDS(on) 0.01Ω Continuous drain current ID 80A Features • N channel • Enhancement mode • Avalanche rated • dv/dtrated • 175 ˚C operating temperature

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLI

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

Avalanche rugged technology

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) • Avalanche rugged technology • High current capability • 175℃ Operating Temperature APPLICATIONS • High current,high speed switching • Solenoid and relay drivers • Regulators • DC-DC & DC-AC converters

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

• VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE/Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMATIVE POWER ACTUATORS

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件：323.03 Kbytes Page：7 Pages

High input impedance

文件：66.14 Kbytes Page：2 Pages