| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature | SIEMENS 西门子 |   | |
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | | |
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | INFINEON 英飞凌 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | INFINEON 英飞凌 | | ||
场效应管(MOSFET) | SIEMENS 西门子 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
Operational Amplifier with Bias Network 文件：337.51 Kbytes Page：9 Pages | NSC 国半 | |
BUZ111产品属性
- 类型
描述
- 漏源电压(Vdss)：
50V
- 连续漏极电流(Id)：
80A
- 功率(Pd)：
300W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
INFINEON |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
INFINEON |
25+ |
TO-263 |
6000 |
公司渠道现货 |
|||
INFINEON/英飞凌 |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
ADI |
23+ |
TO-263 |
7000 |
||||
INFINEON/英飞凌 |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
23+ |
1 |
||||||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
BUZ111芯片相关品牌
BUZ111规格书下载地址
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DdatasheetPDF页码索引
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