型号 功能描述 生产厂家 企业 LOGO 操作
BUZ111

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

SIEMENS

西门子

BUZ111

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

BUZ111

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Infineon

英飞凌

场效应管(MOSFET)

SIEMENS

西门子

Pico SIL/SIP Reed Relays

— Including 1.5 GHz coaxial types — Stacks on 0.15 x 0.40 inches pitch — Highest quality instrumentation grade switches — Mu-metal magnetic screening — Two package styles - mu-metal package or plastic package with internal mu-metal magnetic screen — They take up the minimum of board area, con

PICKERING

1/4 ENCLOSED PHONE JACKS

文件:94.03 Kbytes Page:5 Pages

SWITCH

111/519 Series 5mm Fuse Clips Taped for Automated Insertion

文件:1.35386 Mbytes Page:1 Pages

Littelfuse

力特

Protective Covers Ultrasonically-welded with Strain Relief

文件:622.5 Kbytes Page:1 Pages

ARIES

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

BUZ111产品属性

  • 类型

    描述

  • 型号

    BUZ111

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    SIPMOS Power Transistor(N channel Enhancement mode Avalanche-rated dv/dt rated)

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
3345
原装现货,当天可交货,原型号开票
INFINEON
23+
NA
6500
全新原装假一赔十
INFINEON/英飞凌
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
BROADCOM
24+
BGA
12866
公司现货库存,支持实单
INFINEON
25+
TO-220
87
原装正品,假一罚十!
INFINEON/英飞凌
22+
SOT-263
100000
代理渠道/只做原装/可含税
Infineon
24+
TO263
17300
一级分销商,原装正品
INFINEON
22+
TO-263
20000
公司只有原装 品质保证
23+
1
INFINEON
23+
TO-263
1520
绝对全新原装!优势供货渠道!特价!请放心订购!

BUZ111数据表相关新闻