| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature | SIEMENS 西门子 |   | |
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | | |
BUZ111 | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | INFINEON 英飞凌 | | |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | INFINEON 英飞凌 | | ||
场效应管(MOSFET) | SIEMENS 西门子 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
Voltage Comparator 文件：1.08989 Mbytes Page：23 Pages | NSC 国半 | | ||
Operational Amplifier with Bias Network 文件：337.51 Kbytes Page：9 Pages | NSC 国半 | |
BUZ111产品属性
- 类型
描述
- 漏源电压(Vdss)：
50V
- 连续漏极电流(Id)：
80A
- 功率(Pd)：
300W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
22+ |
TO-220 |
90080 |
||||
INFINEON/英飞凌 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
|||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
1932+ |
TO-263 |
503 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon |
2602+ |
TO-263 |
13523 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
inf |
25+ |
NA |
2486 |
专做原装正品,假一罚百! |
|||
INFINEON |
23+ |
TO-263 |
1520 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
BUZ111规格书下载地址
BUZ111参数引脚图相关
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- BUZ10
- BUY92
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DdatasheetPDF页码索引
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