型号 功能描述 生产厂家 企业 LOGO 操作
BUZ111S

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

BUZ111S

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

BUZ111S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

SIEMENS

西门子

SIPMOS® Power Transistor

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Infineon

英飞凌

场效应管(MOSFET)

SIEMENS

西门子

Pico SIL/SIP Reed Relays

— Including 1.5 GHz coaxial types — Stacks on 0.15 x 0.40 inches pitch — Highest quality instrumentation grade switches — Mu-metal magnetic screening — Two package styles - mu-metal package or plastic package with internal mu-metal magnetic screen — They take up the minimum of board area, con

PICKERING

111/519 Series 5mm Fuse Clips Taped for Automated Insertion

文件:1.35386 Mbytes Page:1 Pages

Littelfuse

力特

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

1/4 ENCLOSED PHONE JACKS

文件:94.03 Kbytes Page:5 Pages

SWITCH

Protective Covers Ultrasonically-welded with Strain Relief

文件:622.5 Kbytes Page:1 Pages

ARIES

BUZ111S产品属性

  • 类型

    描述

  • 型号

    BUZ111S

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-11-1 10:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
TO-263
1520
绝对全新原装!优势供货渠道!特价!请放心订购!
INFINEON
24+
TO-220
590
INFINEON
1932+
TO-263
503
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
23+
TO-263
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
Infineon(英飞凌)
24+
TO-263
8498
支持大陆交货,美金交易。原装现货库存。
WS
17+
31518
原装正品 可含税交易
XI.M.Z
16+
TO-220
10000
全新原装现货
Infineon(英飞凌)
21+
TO-263
783
原装现货,假一罚十
INFINEON/英飞凌
23+
TO-220
50000
全新原装正品现货,支持订货

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