型号 功能描述 生产厂家 企业 LOGO 操作
BUZ111S

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

INFINEON

英飞凌

BUZ111S

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

BUZ111S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

INFINEON

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

SIEMENS

西门子

SIPMOS® Power Transistor

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

INFINEON

英飞凌

场效应管(MOSFET)

SIEMENS

西门子

Pico SIL/SIP Reed Relays

— Including 1.5 GHz coaxial types — Stacks on 0.15 x 0.40 inches pitch — Highest quality instrumentation grade switches — Mu-metal magnetic screening — Two package styles - mu-metal package or plastic package with internal mu-metal magnetic screen — They take up the minimum of board area, con

PICKERING

111/519 Series 5mm Fuse Clips Taped for Automated Insertion

文件:1.35386 Mbytes Page:1 Pages

LITTELFUSE

力特

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

HONEYWELL

霍尼韦尔

1/4 ENCLOSED PHONE JACKS

文件:94.03 Kbytes Page:5 Pages

SWITCH

Protective Covers Ultrasonically-welded with Strain Relief

文件:622.5 Kbytes Page:1 Pages

ARIES

BUZ111S产品属性

  • 类型

    描述

  • 型号

    BUZ111S

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-3-13 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
1
INFINEON/英飞凌
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
BROADCOM
24+
BGA
12866
公司现货库存,支持实单
I
25+
P-TO263-3-2
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Infineon
25+
TO263
17300
一级分销商,原装正品
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
23+
TO-263
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
INFINEON
2025+
TO263
3645
全新原厂原装产品、公司现货销售
2023+
5800
进口原装,现货热卖

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