N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLI

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

Avalanche rugged technology

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) • Avalanche rugged technology • High current capability • 175℃ Operating Temperature APPLICATIONS • High current,high speed switching • Solenoid and relay drivers • Regulators • DC-DC & DC-AC converters

SEMICONDUCTORS

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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)