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BUL12晶体管资料
BUL128别名：BUL128三极管、BUL128晶体管、BUL128晶体三极管
BUL128生产厂家：
BUL128制作材料：Si-N+Di
BUL128性质：开关管 （S）_功率放大 （L）
BUL128封装形式：直插封装
BUL128极限工作电压：700V
BUL128最大电流允许值：4A
BUL128最大工作频率：<1MHZ或未知
BUL128引脚数：3
BUL128最大耗散功率：70W
BUL128放大倍数：
BUL128图片代号：B-10
BUL128vtest：700
BUL128htest：999900
- BUL128atest：4
BUL128wtest：70
BUL128代换 BUL128用什么型号代替：BUF620,BUH50,
BUL12价格
参考价格：￥4.1331
型号：BUL1203E 品牌：STMicroelectronics 备注：这里有BUL12多少钱，2025年最近7天走势，今日出价，今日竞价，BUL12批发/采购报价，BUL12行情走势销售排行榜，BUL12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current leve | STMICROELECTRONICS 意法半导体 |   | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current leve | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High Voltage • High Speed Switching • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Electronic ballasts for fluorescent lighting | ISC 无锡固电 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL1203EFP is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current le | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
High Voltage Fast-Switching NPN Power Transistor DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | SUNTAC | | ||
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design | TGS | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. | ISC 无锡固电 | | ||
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d | TGS | | ||
Silicon NPN Power Transistor EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting. | ISC 无锡固电 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl | FOSHAN 蓝箭电子 | | ||
Silicon NPN transistor in a TO-220F Plastic Package. Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl | FOSHAN 蓝箭电子 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon NPN Power Transistor 文件：358.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor 文件：358.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 550V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
电源高反压三极管/1300系列 | FOSHAN 蓝箭电子 | | ||
Silicon NPN transistor in a TO-92 Plastic Package. 文件：788.44 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：242.14 Kbytes Page：7 Pages | STMICROELECTRONICS 意法半导体 | |
BUL12产品属性
- 类型
描述
- 型号
BUL12
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3605 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法半导体 |
2021+ |
TO-220-3 |
7600 |
原装现货，欢迎询价 |
|||
ST |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
STS |
23+ |
58576 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
||||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
ST/意法 |
2450+ |
TO220 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
TO220 |
1000 |
原装长期供货! |
||||
ST |
22+ |
TO-220 |
5000 |
全新原装现货!自家库存! |
BUL12芯片相关品牌
BUL12规格书下载地址
BUL12参数引脚图相关
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BUL12数据表相关新闻
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2019-11-17
DdatasheetPDF页码索引
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