DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

■ STMicroelectronics PREFERRED SALES TYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE

APPLICATIONS

■ ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING

■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS