BUL1203E价格

参考价格:¥4.1331

型号:BUL1203E 品牌:STMicroelectronics 备注:这里有BUL1203E多少钱,2025年最近7天走势,今日出价,今日竞价,BUL1203E批发/采购报价,BUL1203E行情走势销售排行榜,BUL1203E报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BUL1203E

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Speed Switching • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Electronic ballasts for fluorescent lighting

ISC

无锡固电

BUL1203E

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current leve

STMICROELECTRONICS

意法半导体

BUL1203E

isc Silicon NPN Power Transistor

文件:358.63 Kbytes Page:2 Pages

ISC

无锡固电

BUL1203E

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 550V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BUL1203E

High voltage fast-switching NPN power transistor

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL1203EFP is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current le

STMICROELECTRONICS

意法半导体

isc Silicon NPN Power Transistor

文件:358.63 Kbytes Page:2 Pages

ISC

无锡固电

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 550V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

Switching application

文件:192.98 Kbytes Page:4 Pages

KODENSHI

可天士

Appliance inlet for low voltage, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal

文件:316.56 Kbytes Page:3 Pages

SCHURTER

硕特

SPEED DRIVER INTEGRATED SERIES

文件:582.7 Kbytes Page:1 Pages

ASSUN

N-Channel 200 V (D-S) MOSFET

文件:1.52919 Mbytes Page:6 Pages

VBSEMI

微碧半导体

InGenius High-CMRR Balanced Input Line Receiver

文件:157.56 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BUL1203E产品属性

  • 类型

    描述

  • 型号

    BUL1203E

  • 功能描述

    两极晶体管 - BJT N Ch 75V 3.5m 120A Pwr MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 12:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2023+
TO-220
5800
进口原装,现货热卖
ST
24+
N/A
8000
全新原装正品,现货销售
STS
23+
58576
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST(意法半导体)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ST/意法
24+
NA/
3605
原装现货,当天可交货,原型号开票
ST
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
ST
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
ST/意法半导体
24+
TO-220-3
6000
全新原装深圳仓库现货有单必成
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择

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