HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current leve

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current leve

High voltage fast-switching NPN power transistor

The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA.\n\n Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high colle • High voltage capability \n• Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• Very high switching speed;

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Speed Switching • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Electronic ballasts for fluorescent lighting

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

• HIGH VOLTAGE CAPABILITY\n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION\n• LOW SPREAD OF DYNAMIC PARAMETERS• FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING\n• VERY HIGH SWITCHING SPEED;

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL1203EFP is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current le

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 550V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Power Transistor

文件：358.63 Kbytes Page：2 Pages

isc Silicon NPN Power Transistor

文件：358.63 Kbytes Page：2 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 550V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SOLID STATE GTR DRIVER MODULE (GTR DRIVER)

DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER

DESCRIPTION The TSA1203 is a new generation of high speed, dual-channel Analog to Digital converter processed in a mainstream 0.25µm CMOS technology yielding high performances and very low power consumption. ■ Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V Independ

DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER

DESCRIPTION The TSA1203 is a new generation of high speed, dual-channel Analog to Digital converter processed in a mainstream 0.25µm CMOS technology yielding high performances and very low power consumption. ■ Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V Independ

RGB Video Amplifier System

文件：559.97 Kbytes Page：16 Pages

RGB Video Amplifier System

文件：559.97 Kbytes Page：16 Pages