BUL128晶体管资料

  • BUL128别名:BUL128三极管、BUL128晶体管、BUL128晶体三极管

  • BUL128生产厂家

  • BUL128制作材料:Si-N+Di

  • BUL128性质:开关管 (S)_功率放大 (L)

  • BUL128封装形式:直插封装

  • BUL128极限工作电压:700V

  • BUL128最大电流允许值:4A

  • BUL128最大工作频率:<1MHZ或未知

  • BUL128引脚数:3

  • BUL128最大耗散功率:70W

  • BUL128放大倍数

  • BUL128图片代号:B-10

  • BUL128vtest:700

  • BUL128htest:999900

  • BUL128atest:4

  • BUL128wtest:70

  • BUL128代换 BUL128用什么型号代替:BUF620,BUH50,

型号 功能描述 生产厂家&企业 LOGO 操作
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BUL128

HighVoltageFast-SwitchingNPNPowerTransistor

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

TGS

Tiger Electronic Co.,Ltd

TGS
BUL128

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUL128

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件:235.5 Kbytes Page:7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

TGS

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A •VeryHighSwitchingSpeed APPLICATIONS •Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaTO-220FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220FPlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件:235.5 Kbytes Page:7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件:228.24 Kbytes Page:8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件:228.24 Kbytes Page:8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件:242.14 Kbytes Page:7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor24(7/32)AWGBareCopper0.024 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.044 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Component

ALPHAWIRE

Alpha Wire

ALPHAWIRE

UltraHighFrequencyTransistorArrays

文件:298.68 Kbytes Page:13 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

TemperatureSensorsLineGuide

文件:736.09 Kbytes Page:11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

WihaQualityToolsTollFree:(800)494-6104

文件:256.26 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

WihaInsulated1/4Sockets&Sets

文件:259.62 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

BUL128产品属性

  • 类型

    描述

  • 型号

    BUL128

  • 功能描述

    两极晶体管 - BJT NPN Hi-Volt Fast Sw

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-3-19 15:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
标准封装
58250
一级代理原装正品现货期货均可订购
ST/意法半导体
23+
N/A
20000
ST
23+
TO220
18000
ST
21+
TO-220
12588
原装正品,自己库存 假一罚十
ST
1746+
TO-220
8862
深圳公司现货!特价支持工厂客户!提供样品!
ST
21+
TO220
3750
原装优势现货ST专营
ST/意法
21+
TO-220
60000
原装正品进口现货
ST
2021+
TO-220-3
39
只做原装/假一赔十/安心咨询
NA
19+
66949
原厂代理渠道,每一颗芯片都可追溯原厂;
ST/意法
22+/23+
TO-220
9800
原装进口公司现货假一赔百

BUL128芯片相关品牌

  • ALSC
  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

BUL128数据表相关新闻