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BUL128晶体管资料

BUL128别名：BUL128三极管、BUL128晶体管、BUL128晶体三极管
BUL128生产厂家：
BUL128制作材料：Si-N+Di
BUL128性质：开关管（S）_功率放大（L）
BUL128封装形式：直插封装
BUL128极限工作电压：700V
BUL128最大电流允许值：4A
BUL128最大工作频率：<1MHZ或未知
BUL128引脚数：3
BUL128最大耗散功率：70W
BUL128放大倍数：
BUL128图片代号：B-10
BUL128vtest：700
BUL128htest：999900
BUL128atest：4
BUL128wtest：70

BUL128代换 BUL128用什么型号代替：BUF620,BUH50,

型号	功能描述	生产厂家企业	LOGO
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	High Voltage Fast-Switching NPN Power Transistor DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	SUNTAC	SUNTAC
BUL128	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design	TGS	TGS
BUL128	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.	ISC 无锡固电	ISC
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	封装/外壳：TO-220-3 包装：卷带（TR）描述：TRANS NPN 400V 4A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D	Silicon NPN Power Transistor EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.	ISC 无锡固电	ISC
BUL128D	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.	ISC 无锡固电	ISC
BUL128D	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d	TGS	TGS
BUL128DB	isc Silicon NPN Power Transistor DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.	ISC 无锡固电	ISC
BUL128D-B	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128DR7	Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl	FOSHAN 蓝箭电子	FOSHAN
BUL128DR8	Silicon NPN transistor in a TO-220F Plastic Package. Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl	FOSHAN 蓝箭电子	FOSHAN
BUL128FP	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128_01	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D	Power Transistors	Wanli	Wanli
BUL128D	TO-220 Bipolar Junction Transistors	LISION	LISION
BUL128D-B	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D-B_05	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128FP	封装/外壳：TO-220-3 整包包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 400V 4A TO220FP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128FP_01	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：242.14 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BSP128	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching	PHILIPS 飞利浦	PHILIPS
NTE128	Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c	NTE	NTE
NTE128P	Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability	NTE	NTE
MA128	Silicon epitaxial planar type 文件：49.24 Kbytes Page：2 Pages	PANASONIC 松下	PANASONIC

BUL128产品属性

类型
描述
Ic(max)：
2000
BVCBO：
4000
VCEO：
700
BVEBO：
400
hFE(MIN)：
9
hFE(MAX)：
8
VCE：
40
IC：
5
VCE(sat)：
2000
IC(mA)：
0.5
IB(mA)：
4000
fT：
1000
Package：
TO-220

BUL128供应商更多...

更新时间：2026-5-14 15:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	BUL128A	ST	22+	TO-220	10016	进口原装	询价
深圳市富芯乐电子科技有限公司	BUL128-K	ST	24+	NA	100000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市昌和盛利电子有限公司	BUL128A	ST	26+	TO220	18689	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市卓越微芯电子有限公司	BUL128A	ST	25+	TO220	600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市诺美思科技有限公司	BUL128FP	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市宏捷佳电子科技有限公司	BUL128A	ST	2023+	TO220	50000	原装现货	询价
深圳市得捷芯城科技有限公司	BUL128A	ST(意法)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市向鸿伟业电子有限公司	BUL128	ST/意法	2406+		11260	诚信经营!进口原装!量大价优!	询价
深圳市佳鑫美电子科技有限公司	BUL128	ST	25+	DIP3	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	BUL128FP	ST原装	25+23+	TO-220	22879	绝对原装正品全新进口深圳现货	询价

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深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
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找IC，尽在114IC

BUL128晶体管资料

BUL128产品属性

BUL128供应商更多...

BUL128芯片相关品牌

BUL128规格书下载地址

BUL128参数引脚图相关

BUL128数据表相关新闻

BUK9Y19-75B

BUK9Y22-100E MOSFET N-channel 100 V 22 mo FET

BUK9Y19-100E BUK9Y19-100E 电子元器件MOSFET 100V N-CH LOGIC LEVEL IN LFPA

Bulgin连接器BOX1M1205MA05M805F原装现货

Bulgin标准环形连接器PX0411/08P/4550原装现货

Bulgin连接器DX1117-RD原装现货

DdatasheetPDF页码索引