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位置：首页 > IC中文资料第171页 > BUL128

BUL128晶体管资料

  • BUL128别名：BUL128三极管、BUL128晶体管、BUL128晶体三极管

  • BUL128生产厂家：

  • BUL128制作材料：Si-N+Di

  • BUL128性质：开关管 （S）_功率放大 （L）

  • BUL128封装形式：直插封装

  • BUL128极限工作电压：700V

  • BUL128最大电流允许值：4A

  • BUL128最大工作频率：<1MHZ或未知

  • BUL128引脚数：3

  • BUL128最大耗散功率：70W

  • BUL128放大倍数：

  • BUL128图片代号：B-10

  • BUL128vtest：700

  • BUL128htest：999900

  • BUL128atest：4

  • BUL128wtest：70

  • BUL128代换 BUL128用什么型号代替：BUF620,BUH50,

型号 功能描述 生产厂家&企业 LOGO 操作
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128

HighVoltageFast-SwitchingNPNPowerTransistor

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

SUNTAC

Suntac Electronic Corp.

SUNTAC
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

TGS

Tiger Electronic Co.,Ltd

TGS
BUL128

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUL128

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件：235.5 Kbytes Page：7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128D

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUL128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

TGS
BUL128D

SiliconNPNPowerTransistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUL128DB

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A •VeryHighSwitchingSpeed APPLICATIONS •Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128DR7

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BUL128DR8

SiliconNPNtransistorinaTO-220FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220FPlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BUL128FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128_01

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件：235.5 Kbytes Page：7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件：228.24 Kbytes Page：8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128D-B_05

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件：228.24 Kbytes Page：8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128FP

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
BUL128FP_01

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

文件：242.14 Kbytes Page：7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
128

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor24(7/32)AWGBareCopper0.024 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.044 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Component

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
128

TemperatureSensorsLineGuide

文件：736.09 Kbytes Page：11 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
128

WihaQualityToolsTollFree:(800)494-6104

文件：256.26 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
128

WihaInsulated1/4Sockets&Sets

文件：259.62 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
128

UltraHighFrequencyTransistorArrays

文件：298.68 Kbytes Page：13 Pages

Intersil

Intersil Corporation

Intersil

BUL128产品属性

  • 类型

    描述

  • 型号

    BUL128

  • 功能描述

    两极晶体管 - BJT NPN Hi-Volt Fast Sw

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

BUL128供应商更多...

更新时间：2025-5-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
BUL128
ST-MICROELECTRONICS
25+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市一线半导体有限公司
BUL128
ST
24+
142
询价
深圳市向鸿伟业电子有限公司
BUL128A
ST/意法
2410+
TO-220
13000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
深圳市勤思达科技有限公司
BUL128A
ST(意法半导体)
TO-220-3
5314
全新原装正品现货可开票
询价
深圳市恒创达实业有限公司
BUL128
ST
17+
TO-220
6200
询价
深圳市吉银科技有限公司
BUL128
STS
1535+
244
询价
齐创科技(上海,北京,青岛)有限公司
BUL128
ST
23+
TO220
5000
原装正品,假一罚十
询价
深圳市兴灿科技有限公司
BUL128
STM原厂目录
24+
TO-220
96000
全新原装
询价
深圳市坤融电子科技有限公司
BUL128A
ST/意法
24+
TO-220-3
34
原厂授权代理 价格绝对优势
询价
艾睿国际（香港）有限公司
BUL128
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价

BUL128芯片相关品牌

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  • WPI
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BUL128规格书下载地址

BUL128参数引脚图相关

BUL128数据表相关新闻

DdatasheetPDF页码索引

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