HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

High Voltage Fast-Switching NPN Power Transistor

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Silicon NPN Power Transistor

EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：235.5 Kbytes Page：7 Pages

Power Transistors

TO-220 Bipolar Junction Transistors

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：228.24 Kbytes Page：8 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：228.24 Kbytes Page：8 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：242.14 Kbytes Page：7 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

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