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BUL128晶体管资料

BUL128别名：BUL128三极管、BUL128晶体管、BUL128晶体三极管
BUL128生产厂家：
BUL128制作材料：Si-N+Di
BUL128性质：开关管（S）_功率放大（L）
BUL128封装形式：直插封装
BUL128极限工作电压：700V
BUL128最大电流允许值：4A
BUL128最大工作频率：<1MHZ或未知
BUL128引脚数：3
BUL128最大耗散功率：70W
BUL128放大倍数：
BUL128图片代号：B-10
BUL128vtest：700
BUL128htest：999900
BUL128atest：4
BUL128wtest：70

BUL128代换 BUL128用什么型号代替：BUF620,BUH50,

型号	功能描述	生产厂家企业	LOGO
BUL128	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.	ISC 无锡固电	ISC
BUL128	High Voltage Fast-Switching NPN Power Transistor DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	SUNTAC	SUNTAC
BUL128	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design	TGS	TGS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128	封装/外壳：TO-220-3 包装：卷带（TR）描述：TRANS NPN 400V 4A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d	TGS	TGS
BUL128D	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.	ISC 无锡固电	ISC
BUL128D	Silicon NPN Power Transistor EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.	ISC 无锡固电	ISC
BUL128DB	isc Silicon NPN Power Transistor DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.	ISC 无锡固电	ISC
BUL128D-B	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128DR7	Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl	FOSHAN 蓝箭电子	FOSHAN
BUL128DR8	Silicon NPN transistor in a TO-220F Plastic Package. Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl	FOSHAN 蓝箭电子	FOSHAN
BUL128FP	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128_01	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：235.5 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D	TO-220 Bipolar Junction Transistors	LISION	LISION
BUL128D	Power Transistors	Wanli	Wanli
BUL128D-B	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128D-B_05	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：228.24 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128FP	封装/外壳：TO-220-3 整包包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 400V 4A TO220FP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUL128FP_01	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：242.14 Kbytes Page：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BSP128	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching	PHILIPS 飞利浦	PHILIPS
NTE128	Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c	NTE	NTE
NTE128P	Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability	NTE	NTE
MA128	Silicon epitaxial planar type 文件：49.24 Kbytes Page：2 Pages	PANASONIC 松下	PANASONIC

BUL128产品属性

类型
描述
Ic(max)：
2000
BVCBO：
4000
VCEO：
700
BVEBO：
400
hFE(MIN)：
9
hFE(MAX)：
8
VCE：
40
IC：
5
VCE(sat)：
2000
IC(mA)：
0.5
IB(mA)：
4000
fT：
1000
Package：
TO-220

BUL128供应商更多...

更新时间：2026-7-22 19:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BUL128A-CN	ST/意法	25+	TO-220	32000	ST/意法全新特价BUL128A-CN即刻询购立享优惠#长期有货	询价
深圳市米数科技有限公司	BUL128A	ST	25+	TO-220	12880	原装,诚信经营	询价
深圳市得捷芯城科技有限公司	BUL128A	ST(意法)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市力拓辉电子有限公司	BUL128A	ST	21+	TO-92	50000	全新原装鄙视假货	询价
深圳市勤思达科技有限公司	BUL128A	ST(意法半导体)		TO-220-3	5314	全新原装正品现货可开票	询价
深圳市高捷芯城科技有限公司	BUL128A	ST(意法)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市创新迹电子有限公司	BUL128A	ST专家	2021+	TO-220	6800	原厂原装,欢迎咨询	询价
深圳庞田科技有限公司	BUL128A-CN	ST/意法	2023+原装正品现货	TO-220	9800	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价

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找IC，尽在114IC

BUL128晶体管资料

BUL128产品属性

BUL128供应商更多...

BUL128芯片相关品牌

BUL128规格书下载地址

BUL128参数引脚图相关

BUL128数据表相关新闻

BUK9Y19-75B 安世车规级 N 沟道 MOSFET 原装现货供应

BUK9Y19-75B

BUK9Y22-100E MOSFET N-channel 100 V 22 mo FET

Bulgin连接器BOX1M1205MA05M805F原装现货

Bulgin标准环形连接器PX0411/08P/4550原装现货

Bulgin连接器DX1117-RD原装现货

DdatasheetPDF页码索引