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BUL128晶体管资料

  • BUL128别名:BUL128三极管、BUL128晶体管、BUL128晶体三极管

  • BUL128生产厂家

  • BUL128制作材料:Si-N+Di

  • BUL128性质:开关管 (S)_功率放大 (L)

  • BUL128封装形式:直插封装

  • BUL128极限工作电压:700V

  • BUL128最大电流允许值:4A

  • BUL128最大工作频率:<1MHZ或未知

  • BUL128引脚数:3

  • BUL128最大耗散功率:70W

  • BUL128放大倍数

  • BUL128图片代号:B-10

  • BUL128vtest:700

  • BUL128htest:999900

  • BUL128atest:4

  • BUL128wtest:70

  • BUL128代换 BUL128用什么型号代替:BUF620,BUH50,

型号 功能描述 生产厂家 企业 LOGO 操作
BUL128

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

BUL128

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

BUL128

High Voltage Fast-Switching NPN Power Transistor

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

SUNTAC

BUL128

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

TGS

BUL128

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.

ISC

无锡固电

BUL128

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:235.5 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

BUL128

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BUL128

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistor

EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

TGS

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.

ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl

FOSHAN

蓝箭电子

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl

FOSHAN

蓝箭电子

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:235.5 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

Power Transistors

Wanli

TO-220 Bipolar Junction Transistors

LISION

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:242.14 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

NTE

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

NTE

Silicon epitaxial planar type

文件:49.24 Kbytes Page:2 Pages

PANASONIC

松下

BUL128产品属性

  • 类型

    描述

  • Ic(max):

    2000

  • BVCBO:

    4000

  • VCEO:

    700

  • BVEBO:

    400

  • hFE(MIN):

    9

  • hFE(MAX):

    8

  • VCE:

    40

  • IC:

    5

  • VCE(sat):

    2000

  • IC(mA):

    0.5

  • IB(mA):

    4000

  • fT:

    1000

  • Package:

    TO-220

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
恩XP
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
ST
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST/意法半导体
25+
TO-220-3
20000
公司只有正品,实单可谈
ST/意法
25+
TO-220
32000
ST/意法全新特价BUL128A-CN即刻询购立享优惠#长期有货
ST
26+
TO220
18689
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ST/意法
25+
TO-220-3
20000
原装
ST
21+
TO-92
50000
全新原装鄙视假货
ST
18+
TO-220
85600
保证进口原装可开17%增值税发票
ST/意法
2450+
TO220-3
8850
只做原装正品假一赔十为客户做到零风险!!

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