POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers.

High voltage NPN Power transistor

FEATURES • Stable performance vs. operating temperature variation • High ruggedness • Tigth hFE range at operating collector current • TO-3P and TO-247AB package which can be installed to the heat sink with one screw APPLICATIONS • Switching mode power supplies and general purp

Silicon NPN Power Transistors

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SEMICONDUCTORS

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Silicon NPN Power Transistor

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HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR

Features ※ Collector-Emitter Sustaining Voltage-Vcex=1500V(min.) ※ Stable performances versus operating TEMP variation ※ No Damper Diode ※ Low base-drive requirement ※ High ruggedness Application ※ Large screen colour deflection circuits. ※ Ultrasonic equipment system ※ Plating Power Supp

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers.

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode)

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers.

High voltage NPN Power transistor for standard Definition CRT display

Description The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable per

NPN POWER TRANSISTORS

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High voltage,high-speed switching npn transistors in a plastic envelope,primarily for use in switching power circuites of colour television receivers

TV Horizontal Output Applications

TV Horizontal Output Applications

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

SILICON DIFFUSED POWER TRANSISTOR

SILICON DIFFUSED POWER TRANSISTOR DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. Features * TV color horizontal deflection. * With TO-3PML fully isol

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

NPN SILICON PLANAR POWER TRANSISTOR

High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

High voltage NPN Power transistor for standard Definition CRT display

Description The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable per

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter SustainingVoltage- : VCEO(Sus)= 700V (Min) • High Switching Speed - APPLICATIONS • Designed for use in horizontal deflectioncircuits of color TVreceivers.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·Built-in damper diode APPLICATIONS ·For use in large screen colour deflection circuits.

Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode APPLICATIONS • Designed for use in horizontal deflection circuits of colour TV receivers.

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

NPN POWER TRANSISTORS

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers

SILICON DIFFUSED POWER TRANSISTORS

[COMSET] The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers.

SILICON DIFFUSED POWER TRANSISTORS

SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance to RoHS.

Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • High Voltage • Built-in Integrated Diode APPLICATIONS • Designed for use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-247 package ·High voltage, high speed ·With integrated efficiency diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-247 package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage,high speed • With integrated efficiency diode APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage,high speed • Built-in damper diode APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- lc = 8.0A • Built-in Integrated Diode APPLICATIONS • Designed for use in large screen color deflection circuits .