Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

NPN POWER TRANSISTORS

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers

SILICON DIFFUSED POWER TRANSISTORS

SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance to RoHS.

SILICON DIFFUSED POWER TRANSISTORS

[COMSET] The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers.

Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • High Voltage • Built-in Integrated Diode APPLICATIONS • Designed for use in horizontal deflection circuits of colour TV receivers.

SEMICONDUCTORS

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Transistor

Silicon NPN Power Transistors

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isc Silicon NPN Power Transistors

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SILICON DIFFUSED POWER TRANSISTOR

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NPN POWER TRANSISTORS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

SILICON DIFFUSED POWER TRANSISTOR

文件：109.85 Kbytes Page：3 Pages

isc Silicon NPN Power Transistors

文件：286.91 Kbytes Page：2 Pages

Silicon NPN Power Transistors

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POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and