Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage,high speed • Built-in damper diode APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage,high speed • With integrated efficiency diode APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- lc = 8.0A • Built-in Integrated Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

Silicon Diffused Power Transistor

Silicon NPN Power Transistors

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POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and