Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High voltage,high-speed switching npn transistors in a plastic envelope,primarily for use in switching power circuites of colour television receivers

TV Horizontal Output Applications

TV Horizontal Output Applications

High voltage NPN Power transistor for standard Definition CRT display

Description The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable per

NPN POWER TRANSISTORS

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

标清CRT显示器的高压NPN功率晶体管

The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. • Fully insulated power package U.L. compliant \n• State-of-the-art technology:Diffused collector “Enhanced generation” \n• Low base-drive requirement \n• Stable performances versus operating temperature variation \n• High ruggedness \n• Tigh hFE range at operating collector current;

Trans GP BJT NPN 700V 5A 3-Pin(3+Tab) TO-3PF

功率开关晶体管

Silicon NPN Power Transistors

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SEMICONDUCTORS

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封装/外壳：TO-3P-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 8A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage NPN power transistor for standard definition CRT display

文件：214.78 Kbytes Page：11 Pages

NPN POWER TRANSISTORS

文件：40.62 Kbytes Page：3 Pages

SILICON DIFFUSED POWER TRANSISTOR

SILICON DIFFUSED POWER TRANSISTOR DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. Features * TV color horizontal deflection. * With TO-3PML fully isol

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 700V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

High voltage NPN power transistor for standard definition CRT display

文件：214.78 Kbytes Page：11 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：240.24 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：150.6 Kbytes Page：3 Pages

SILICON DIFFUSED POWER TRANSISTOR

文件：84.49 Kbytes Page：2 Pages

封装/外壳：TO-3P-3 整包 包装：带盒（TB） 描述：TRANS NPN 700V 5A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and