Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.

High voltage NPN Power transistor for standard Definition CRT display

Description The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable per

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter SustainingVoltage- : VCEO(Sus)= 700V (Min) • High Switching Speed - APPLICATIONS • Designed for use in horizontal deflectioncircuits of color TVreceivers.

标清CRT显示器的高压NPN功率晶体管

The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. • TO-247 semi-insulated power package \n• State-of-the-art technology:Diffused collector “Enhanced generation” \n• Low base-drive requirement \n• Stable performances versus operating temperature variation \n• High ruggedness \n• Tigh hFE range at operating collector current;

High voltage NPN power transistor for standard definition CRT display

文件：214.82 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 8A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Diffused Power Transistor

Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-247 Tube

Silicon NPN Power Transistors

文件：118.69 Kbytes Page：3 Pages

High voltage NPN power transistor for standard definition CRT display

文件：214.82 Kbytes Page：11 Pages

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and