Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

Silicon NPN Power Transistors

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POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and