The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mismatch at all phase an

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: •PG= 10 dB min. at 80 W/ 150 MHz • Withstands 30:1Load VSWR • Omnigold™ Metalization System

NPN Silicon RF power transistor

Description: MRF316 is designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

The RF Line NPN Silicon RF Power Transistor

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mism

The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

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封装/外壳：316-01 包装：托盘 描述：TRANS RF NPN 35V 9A 316-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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ROD SEALS

DESCRIPTION The BECA 316 profile is a single acting buffer rod seal with offset lips composed of a profiled polyurethane seal and a POM back-up ring on the back. APPLICATIONS Agriculture Mobile machinery Injection presses Hydraulic cylinders

Milli-Amp AC/DC Clamp Meter

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ULTRA-HIGH FREQUENCY TRANSMITTING TRIODE

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Rotary Position Sensor IC

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Rotary Position Sensor IC

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