NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: •PG= 10 dB min. at 80 W/ 150 MHz • Withstands 30:1Load VSWR • Omnigold™ Metalization System

The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mismatch at all phase an

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

The RF Line NPN Silicon RF Power Transistor

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mism

NPN Silicon RF power transistor

Description: MRF316 is designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz.\nFEATURES:\n•PG= 10 dB min. at 80 W/ 150 MHz\n• Withstands 30:1Load VSWR\n• Omnigold™ Metalization System

NPN SILICON RF POWER Transistor

Trans RF BJT NPN 35V 9A 4-Pin Case 316-01

封装/外壳：316-01 包装：托盘 描述：TRANS RF NPN 35V 9A 316-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

文件：223.9 Kbytes Page：6 Pages

The RF Line NPN Silicon Power Transistor

文件：223.9 Kbytes Page：6 Pages

The RF Line NPN Silicon Power Transistor

文件：223.9 Kbytes Page：6 Pages

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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