BAS316价格

参考价格:¥0.1040

型号:BAS316 品牌:NXP/PHILIPS 备注:这里有BAS316多少钱,2024年最近7天走势,今日出价,今日竞价,BAS316批发/采购报价,BAS316行情走势销售排行榜,BAS316报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS316

High-speeddiode

DESCRIPTION TheBAS316isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD323SMDplasticpackage. FEATURES •VerysmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.100V •Repetitivepeakreversevoltage:

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAS316

SiliconEpitaxialPlanarDiode

FEATURES ●VerysmallplasticSMDpackage ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.100v ●Repetitivepeakreversevoltage:max.100v ●Repetitivepeakforwardcurrent:max.500mA APPLICATIONS ●Surfacemountfastswitchingdiode

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAS316

High-SpeedDiode

Features ●VerysmallplasticSMDpackage ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.75V ●Repetitivepeakreversevoltage:max.85V ●Repetitivepeakforwardcurrent:max.500mA.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BAS316

SurfaceMountSwitchingDiode

FEATURES ●VerysmallplasticSMDpackage ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.100V ●Repetitivepeakreversevoltage:max.100V ●Repetitivepeakforwardcurrent:max.500mA.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BAS316

200mWHighVoltageSMDSwitchingDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BAS316

HighSpeedSwitchingDiode400mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •SurfaceMountPackageIdeallySuitedforAutomaticInsertion •Highswitchingspeed:max.4ns •MoistureSensitivityLevel1 •Con

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAS316

High-speedswitchingdiodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS316

HIGH-SPEEDDIODE

DESCRIPTION TheUTCBAS316ishigh-speeddiode,itusesUTC’sadvancedtechnologytoprovidecustomerswithhighswitchingspeed,etc. TheUTCBAS316issuitableforhigh-speedswitchingine.g.surfacemountedcircuits. FEATURES *Highswitchingspeed

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BAS316

High-speeddiode

DESCRIPTION TheBAS316isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD323(SC76)SMDplasticpackage. FEATURES •UltrasmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevol

WEITRONWEITRON

威堂電子科技

WEITRON
BAS316

SiliconEpitaxialPlanarDiode

FEATURES ●VerysmallplasticSMDpackage. ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.100v ●Repetitivepeakreversevoltage:max.100v ●Repetitivepeakforwardcurrent:max.500mA APPLICATIONS ●Surfacemountfastswitchingdiode

DSK

Diode Semiconductor Korea

DSK
BAS316

SiliconEpitaxialPlanarDiode

FEATURES ●VerysmallplasticSMDpackage ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.100v ●Repetitivepeakreversevoltage:max.100v ●Repetitivepeakforwardcurrent:max.500mA APPLICATIONS ●Surfacemountfastswitchingdiode

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
BAS316

SiliconEpitaxialPlanarDiodes

Features ◇VerysmallplasticSMDpackage. ◇Highswitchingspeed:max.4ns ◇Continuousreversevoltage:max.100v ◇Repetitivepeakreversevoltage:max.100v ◇Repetitivepeakforwardcurrent:max.500mA

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BAS316

High-speedswitchingdiodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS316

SWITCHINGDIODE

SOD-323Plastic-EncapsulateDiodes FEATURES ●VerySmallPlasticPackage ●HighSwitchingSpeed APPLICATIONS ●High-SpeedSwitchingine.g.SurfaceMountedCircuits

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BAS316

SiliconDiodeinaSOD-323PlasticPackage

Descriptions SiliconDiodeinaSOD-323PlasticPackage. Features Smallsignaldiode. Applications Switchingdiodes.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BAS316

SWITCHINGDIODES

DESCRIPTION The BAS316isavailableinSOD323package FEATURES Forsurfacemountedapplications GlassPassivatedChipJunction Fastreverserecoverytime AvailableinSOD323package MECHANICALDATA Case:SOD 323 Terminals:Solderab leperMILSTD750, Method2026 App

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
BAS316

S0OD-323Plastic-EncapsulateDiodes

FEATURES ®VerySmallPlasticPackage eHighSwitchingSpeed APPLICATIONS ®High-SpeedSwitchingine.g.SurfaceMountedCircuits

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BAS316

High-speedswitchingdiodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS316

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BAS316

High-SpeedSwitchingDiodes

Features Vr100V IFav250mA

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE
BAS316

Forsurfacemountedapplications

文件:459.66 Kbytes Page:3 Pages

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BAS316

High-speeddiode

文件:66.35 Kbytes Page:9 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAS316

SiliconEpitaxialPlanarDiode

文件:177.17 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAS316

FastSwitchingSpeed

文件:945.26 Kbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BAS316

SwitchingDiodes

文件:424.77 Kbytes Page:3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BAS316

SwitchingDiodesSiliconEpitaxialPlanar

文件:212.97 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
BAS316

High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages

文件:150.73 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS316

200mWHighVoltageSMDSwitchingDiode

文件:218.03 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BAS316

LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation)

文件:427 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BAS316

High-speedswitchingdiodes

文件:150.73 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS316

High-speedswitchingdiodes

文件:150.73 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAS316

SiliconEpitaxialPlanarDiode

文件:147.58 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

HIGH-SPEEDDIODE

DESCRIPTION TheUTCBAS316ishigh-speeddiode,itusesUTC’sadvancedtechnologytoprovidecustomerswithhighswitchingspeed,etc. TheUTCBAS316issuitableforhigh-speedswitchingine.g.surfacemountedcircuits. FEATURES *Highswitchingspeed

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

200mWHighVoltageSMDSwitchingDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

200mWHighVoltageSMDSwitchingDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

200mW,High-speedswitchingSMDDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

HighSpeedSwitchingDiode

HighSpeedSwitchingDiode Applications •High-speedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

0.25A,100VSurfaceMountSmallSignalSwitchingDiode

FEATURES •Highswitchingspeed:max.4ns •UltrasmallplasticSMDpackage. •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V APPLICATINS •High-speedswitchingine.g.surfacemountedcircuits.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SMDSmallSignalDiodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Rectifying Commercialgrade1) MechanicalData1) Tapedandreeled3000

DiotecDIOTEC

德欧泰克

Diotec

SiliconEpitaxialPlanarSwitchingDiode

Applications •High-speedswitching

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

SMDSmallSignalDiodesSMDKleinsignal-Dioden

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1)

DiotecDIOTEC

德欧泰克

Diotec

SiliconEpitaxialPlanarSwitchingDiode

Applications •High-speedswitching •-CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPcapable

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

SiliconEpitaxialPlanarSwitchingDiode

Applications •High-speedswitching

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

200mW,High-speedswitchingSMDDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

200mW,High-speedswitchingSMDDiode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

封装/外壳:SC-76,SOD-323 包装:管件 描述:DIODE GEN PURP 100V 250MA SOD323 分立半导体产品 二极管 - 整流器 - 单

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

封装/外壳:SC-76,SOD-323 包装:管件 描述:DIODE GEN PURP 100V 250MA SOD323 分立半导体产品 二极管 - 整流器 - 单

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages

文件:150.73 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

High-speeddiode

文件:66.35 Kbytes Page:9 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

HighSpeedSwitchingDiode400mW

文件:422.15 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SiliconEpitaxialPlanarDiode

文件:177.17 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SurfaceMountSwitchingDiode

文件:1.17445 Mbytes Page:3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

200mWHighVoltageSMDSwitchingDiode

文件:218.03 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

SiliconEpitaxialPlanarDiode

文件:147.58 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

High-speedswitchingdiodes

文件:150.73 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SWITCHINGDIODEVOLTAGE100VoltsCURRENT0.25Ampere

文件:96.64 Kbytes Page:2 Pages

CHENMKOCHENMKO

CHENMKO

CHENMKO

HighSpeedSwitchingDiode

文件:239.26 Kbytes Page:5 Pages

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

200mWHighVoltageSMDSwitchingDiode

文件:218.03 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

BAS316产品属性

  • 类型

    描述

  • 型号

    BAS316

  • 制造商

    NXP Semiconductors

  • 功能描述

    DIODE SWITCHING SOD-323

  • 制造商

    NXP Semiconductors

  • 功能描述

    DIODE, SWITCHING, 250MA, 100V, SOD-323

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Rectifier diode,BAS316 0.25A 85V

更新时间:2024-5-11 8:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP
23+
SOT23-3
12700
买原装认准中赛美
PHILIPS
2021+
SOD323
6572
百分百原装正品
NXP/恩智浦
22+
SOD-323
8000
原装正品支持实单
CJ/长电
11+
BGA
39000
CJ/长电 开关二极管 BAS316 BGA 11+
NXP/恩智浦
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
NXP
17+
SOD-323
6200
100%原装正品现货
NXP
2016+
SOD-323
5100
只做原装,假一罚十,公司可开17%增值税发票!
PHI
2020+
SOD-323
16800
绝对原装进口现货,假一赔十,价格优势!?
NEXPERIA/安世
23+
NA
5000
只有原装,欢迎来电咨询!
NEXPERIA/安世
23+
SOD-323
10000
全新原装现货库存

BAS316芯片相关品牌

  • Allegro
  • ETC1
  • HP
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  • Samsung
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  • TOSHIBA
  • Vectron
  • Winchester

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