丝印代码：BSP170P；60V P-CHANNEL ENHANCEMENT MODE MOSFET

Application ●DC-DC Converters. ●Load Switch. ●Power Management.

丝印代码：BSP170P；-60V P-Channel MOSFET

Features • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant

P沟道增强模式场效应晶体管 (FET)，-60 V，SOT-223

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

-60V P-Channel MOSFET

Features • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant

SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)

SIPMOS® Power Transistor ● P-Channel ● Enhancement mode ● Avalanche rated ● dv/dt rated

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

P-Channel 60-V (D-S) MOSFET

文件：953.89 Kbytes Page：7 Pages

SIPMOS Small-Signal-Transistor

文件：298.3 Kbytes Page：9 Pages

SIPMOS짰 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

XTR111 Demonstration Fixture Users Guide

2 Hardware Features This section describes the hardware features found on the XTR111EVM. 2.1 XTR111EVM The XTR111EVM is used for the basic functional evaluation of the XTR111. The EVM provides the following features: • Easy handling of the small DFN package. The DFN device is already soldered

SIPMOS짰 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

文件：298.3 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：298.3 Kbytes Page：9 Pages

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly