位置：首页 > IC中文资料第2924页 > BSM100GB120DN2F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 |   | ||
IGBT Power Module 文件：227.74 Kbytes Page：11 Pages | eupec | | ||
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 | | ||
IGBT Power Module 文件：313.28 Kbytes Page：10 Pages | eupec | |
BSM100GB120DN2F产品属性
- 类型
描述
- 型号
BSM100GB120DN2F
- 功能描述
IGBT 模块 IGBT 1200V 100A
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
模块 |
300 |
只要挂着就有货原装正品价格优惠 |
|||
INFINEON |
25+23+ |
MODULE |
35010 |
绝对原装正品全新进口深圳现货 |
|||
EUPEC |
22+ |
模块 |
8000 |
原装正品支持实单 |
|||
EUPEC |
25+ |
IGBT |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
EUPEC |
08+ |
IGBT |
77 |
全新进口原装绝对公司现货特价! |
|||
EUPEC/欧派克 |
25+ |
原厂原封可拆样 |
64586 |
百分百原装现货 实单必成 |
|||
EUPEC |
25+ |
DIP-28 |
18000 |
原厂直接发货进口原装 |
|||
EUPEC |
24+ |
142 |
|||||
IGBT |
23+ |
55 |
|||||
INFINEON/EUPEC |
2023+ |
MODULE |
63 |
主打螺丝模块系列 |
BSM100GB120DN2F芯片相关品牌
BSM100GB120DN2F规格书下载地址
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BSM100GB120DN2F数据表相关新闻
BSC320N20NS3 G
进口代理
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深圳好佳好科技有限公司 电话：0755-82559658 QQ：1728142002
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2019-8-6
DdatasheetPDF页码索引
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