丝印代码：110N15SC；OptiMOSTM 5 Power-Transistor, 150 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switchi

20V-300V N-Channel Power MOSFET

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OptiMOS ™ 5 功率 MOSFET 150 V，采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

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丝印代码：FIR110N15AN；N-Channel Enhancement Mode Power Mosfet

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丝印代码：FIR110N15P；N-Channel Enhancement Mode Power Mosfet

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