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BLS6价格
参考价格：￥2488.0442
型号：BLS6G2731-120,112 品牌：Philips Semiconducto 备注：这里有BLS6多少钱，2025年最近7天走势，今日出价，今日竞价，BLS6批发/采购报价，BLS6行情走势销售排行榜，BLS6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLS6 | Axial Lead and Cartridge Fuses- Special Midget Midget Fuses Supplementary Overcurrent Protection | Littelfuse 力特 |   | |
BLS6 | Axial Lead and Cartridge Fuses 文件：122.34 Kbytes Page：1 Pages | Littelfuse 力特 | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with of 10 : Output power = 120 W Powe | Ampleon 安谱隆 | | ||
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with of 10 : Output power = 120 W Powe | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 : Output pow | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
S-band LDMOS transistor General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Features and benefits Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
S-band LDMOS transistor General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Features and benefits Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz | Ampleon 安谱隆 | | ||
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Features and benefits Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 : Output pow | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
60R360,hv,高压,sj,超结 | Belling 上海贝岭 | | ||
N-channel Enhanced MOSFETs | Belling 上海贝岭 | | ||
N-channel Enhanced MOSFETs | Belling 上海贝岭 | | ||
LDMOS S-band radar power transistor 文件：81.61 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
封装/外壳：SOT-975C 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 60V 15DB SOT975C 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor 文件：234.43 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
封装/外壳：SOM038 包装：托盘 描述：RF FET LDMOS 32V SOM038 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor 文件：143.14 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
S-band LDMOS transistor 文件：671.64 Kbytes Page：17 Pages | Philips 飞利浦 | | ||
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor 文件：143.24 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor 文件：143.24 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | | |
LDMOS S-Band radar power transistor 文件：84.41 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
LDMOS S-Band radar power transistor 文件：255.34 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
LDMOS S-Band radar power transistor | ETC 知名厂家 | ETC | |
BLS6产品属性
- 类型
描述
- 型号
BLS6
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses- Special Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
SMD |
18766 |
公司现货库存,支持实单 |
|||
恩XP |
24+ |
NA/ |
3255 |
原装现货,当天可交货,原型号开票 |
|||
Ampleon |
1109+ |
假一赔十 |
44 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
25+ |
NA |
40 |
原装正品,假一罚十! |
|||
上海贝岭 |
22+ |
TO-220, TO-220F, TO-251, TO-25 |
150000 |
上海贝岭全系列在售,优势渠道 |
|||
Ampleon |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
恩XP |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
恩XP |
24+ |
SMD |
1680 |
NXP专营品牌进口原装现货假一赔十 |
|||
Ampleon |
24+ |
N/A |
5000 |
全新原装正品,现货销售 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
BLS6规格书下载地址
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2019-9-23
DdatasheetPDF页码索引
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