General description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 :

Output power = 120 W

Power gain = 13.5 dB

Efficiency = 48

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (2.7 GHz to 3.1 GHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

 S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range