General description

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz

range.

Features and benefits

 Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage

of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 :

 Output power = 130 W

 Power gain = 12 dB

 Efficiency = 50

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (2.7 GHz to 3.1 GHz)

 Internally matched for ease of use

 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

 S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range