L-band radar LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina

RF Manual 16th edition

L-band radar LDMOS transistor

RF Manual 16th edition

封装/外壳：SOT-502A 包装：托盘 描述：RF FET LDMOS 75V 12DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频

LDMOS L-band radar power transistor

LDMOS L-band radar power transistor

封装/外壳：SOT-502A 包装：散装 描述：RF FET LDMOS 75V 13DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR