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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLL1214-250R | RF Manual 16th edition | ETC 知名厂家 | ETC |   |
BLL1214-250R | LDMOS L-band radar power transistor | ETC 知名厂家 | ETC | |
BLL1214-250R | LDMOS L-band radar power transistor | ETC 知名厂家 | ETC | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
L-band radar LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina | Philips 飞利浦 | | ||
封装/外壳：SOT-502A 包装：散装 描述：RF FET LDMOS 75V 13DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR | STMICROELECTRONICS 意法半导体 | |
BLL1214-250R产品属性
- 类型
描述
- 型号
BLL1214-250R
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
LDMOS L-band radar power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2511 |
8484 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
AMPLEON |
23+ |
MOSFET |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
||||
恩XP |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
原装 |
1922+ |
TO-63 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
恩XP |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
24+ |
2-LDMOSTSOT467C |
112 |
||||
恩XP |
18+ |
SOT467C |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
Ampleon USA Inc. |
22+ |
SOT467C |
9000 |
原厂渠道,现货配单 |
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BLL1214-250R规格书下载地址
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2019-9-23
DdatasheetPDF页码索引
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