位置：首页 > IC中文资料第1098页 > BLL1214-250,112
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLL1214-250,112 | 封装/外壳：SOT-502A 包装：托盘 描述：RF FET LDMOS 75V 12DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC |   |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
L-band radar LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS L-band radar power transistor | ETC 知名厂家 | ETC | | |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR | STMICROELECTRONICS 意法半导体 | |
BLL1214-250,112产品属性
- 类型
描述
- 型号
BLL1214-250,112
- 功能描述
射频MOSFET电源晶体管 RF LDMOS L-BAND
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
23+ |
高频 |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
25+ |
12 |
原装正品,假一罚十! |
||||
恩XP |
2511 |
8484 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
恩XP |
24+ |
高频 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
AMPLEON |
23+ |
MOSFET |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
原装 |
1922+ |
TO-63 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
恩XP |
23+ |
50000 |
全新原装正品现货,支持订货 |
||||
恩XP |
24+ |
2-LDMOSTSOT467C |
112 |
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BLL1214-250,112规格书下载地址
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DdatasheetPDF页码索引
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