位置：首页 > IC中文资料第1098页 > BLL1214-250,112
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLL1214-250,112 | 封装/外壳：SOT-502A 包装：托盘 描述：RF FET LDMOS 75V 12DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC |   |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
L-band radar LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS L-band radar power transistor | ETC 知名厂家 | ETC | | |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR | STMICROELECTRONICS 意法半导体 | |
BLL1214-250,112产品属性
- 类型
描述
- 型号
BLL1214-250,112
- 功能描述
射频MOSFET电源晶体管 RF LDMOS L-BAND
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
高频 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
2026+ |
12 |
原装正品,假一罚十! |
||||
恩XP |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
恩XP |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
BL |
24+ |
SOT23-3 |
18766 |
公司现货库存,支持实单 |
|||
恩XP |
2026+ |
SOT467C |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
||||
恩XP |
0619+ |
高频 |
12 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
24+ |
2-LDMOSTSOT467C |
112 |
||||
恩XP |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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BLL1214-250,112规格书下载地址
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DdatasheetPDF页码索引
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