HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.4 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.

HiRel NPN Silicon RF Transistor

文件：148.58 Kbytes Page：4 Pages

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.

HiRel NPN Silicon RF Transistor

文件：148.58 Kbytes Page：4 Pages

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances