Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

Amplifier TYansistors

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10.

Bipolar Transistor

Description: •General Purpose NPN Silicon Planar Epitaxial Amplifier Transistors. •This device is designed for general purpose amplifier application at collector currents to 100mA.

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Box

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：TRANS NPN 50V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances