NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10.

Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

Bipolar Transistor

Description: •General Purpose NPN Silicon Planar Epitaxial Amplifier Transistors. •This device is designed for general purpose amplifier application at collector currents to 100mA.

Amplifier TYansistors

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Box

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

Amplifier Transistors Amplifier Transistors

Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices*

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：TRANS NPN 50V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances