RF POWER FET TRANSISTOR

DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold™ Metalization System • High Gain, Rugged device.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

RF POWER FET TRANSISTOR

RF MOSFET

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

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2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件：195.06 Kbytes Page：1 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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