NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

Low Noise Silicon Bipolar RF Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 12V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 10mA

Low Noise Silicon Bipolar RF Transistor

文件：618.78 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：133.04 Kbytes Page：7 Pages

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

isc Silicon NPN RF Transistor

DESCRIPTION ·For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low noise figure ·High power gain

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor

文件：133.04 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：618.78 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：70.17 Kbytes Page：7 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.28 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：517.63 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：517.63 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.28 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件：195.06 Kbytes Page：1 Pages

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件：195.06 Kbytes Page：1 Pages

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

文件：98.78 Kbytes Page：6 Pages