Medium Power Amplifiers and Switches

文件：146.76 Kbytes Page：1 Pages

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA • fT = 7 GHz F = 2.1 dB at 900 MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA • fT = 7 GHz F = 2.1 dB at 900 MHz

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor\u0001For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA\nfT= 7 GHz\n  F= 2.1 dB at 900 MHz

低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 0.5 mA 至 12 mA 的低噪声、高增益宽带放大器 • 适用于低噪声、高增益宽带放大器，集电极电流为 0.5 mA 至 12 mA\n• 无铅（符合 RoHS 标准）封装;

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

丝印代码：RFs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

丝印代码：RFs；NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

丝印代码：RFs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report

丝印代码：RGs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

Low Noise Silicon Bipolar RF Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 12V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 10mA

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

isc Silicon NPN RF Transistor

DESCRIPTION ·For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low noise figure ·High power gain

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

丝印代码：RHs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor

Preliminary data • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

Trans RF BJT NPN 8V 0.004A 3-Pin SOT-23

丝印代码：RFs；NPN Silicon RF Transistor

文件：133.44 Kbytes Page：7 Pages

丝印代码：RFs；Low Noise Silicon Bipolar RF Transistor

文件：619.16 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：133.44 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：619.16 Kbytes Page：6 Pages

丝印代码：RFs；Low Noise Silicon Bipolar RF Transistor

文件：672.64 Kbytes Page：6 Pages

丝印代码：RFs；NPN Silicon RF Transistor

文件：510.37 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：510.37 Kbytes Page：6 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.64 Kbytes Page：6 Pages

丝印代码：RGs；Low Noise Silicon Bipolar RF Transistor

文件：618.78 Kbytes Page：6 Pages

丝印代码：RGs；NPN Silicon RF Transistor

文件：133.04 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：133.04 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：618.78 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：70.17 Kbytes Page：7 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：203.07 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：517.63 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.28 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：517.63 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.28 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

isc Silicon NPN RF Transistor

文件：286.19 Kbytes Page：2 Pages

丝印代码：RHs；NPN Silicon RF Transistor

文件：78.48 Kbytes Page：7 Pages

丝印代码：RHs；Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：78.48 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages