NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

丝印代码：RHs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

丝印代码：RHs；NPN Silicon RF Transistor

文件：78.48 Kbytes Page：7 Pages

丝印代码：RHs；Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages

isc Silicon NPN RF Transistor

文件：286.19 Kbytes Page：2 Pages

低噪声RF 管基

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description

NPN Silicon RF Transistor

Preliminary data • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor

文件：78.48 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

isc Silicon NPN RF Transistor

文件：287.01 Kbytes Page：2 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.73 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：140.84 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：140.84 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.73 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA