NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor

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Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages

isc Silicon NPN RF Transistor

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低噪声RF 管基

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor

Preliminary data • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor

文件：78.48 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：618.94 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

Low Noise Silicon Bipolar RF Transistor

文件：672.73 Kbytes Page：6 Pages

isc Silicon NPN RF Transistor

文件：287.01 Kbytes Page：2 Pages

NPN Silicon RF Transistor

文件：140.84 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：140.84 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：672.73 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Premier Supplier of Electronic Hardware

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

文件：98.14 Kbytes Page：6 Pages

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

PRINTED CIRCUIT PINS

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