Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

Unbased Lens-End Lamps

Unbased Lens-End Lamps Unbased Lamps

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Combination of Thin, Flexible, Solid Cu Conductors embedded between layers of Tough

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INSERT, THRU, REGULAR HEAD STYLE

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MINIATURE FUSES - 5x20 mm

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