Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor

Preliminary data • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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PRINTED CIRCUIT PINS

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