BFR181晶体管资料

  • BFR181别名:BFR181三极管、BFR181晶体管、BFR181晶体三极管

  • BFR181生产厂家

  • BFR181制作材料:Si-NPN

  • BFR181性质:表面帖装型 (SMD)_超高频/特高频 (UHF)_宽频带

  • BFR181封装形式:贴片封装

  • BFR181极限工作电压:20V

  • BFR181最大电流允许值:0.02A

  • BFR181最大工作频率:8GHZ

  • BFR181引脚数:3

  • BFR181最大耗散功率

  • BFR181放大倍数

  • BFR181图片代号:H-15

  • BFR181vtest:20

  • BFR181htest:8000000000

  • BFR181atest:0.02

  • BFR181wtest:0

  • BFR181代换 BFR181用什么型号代替:2SC3585,

BFR181价格

参考价格:¥1057.5021

型号:BFR1811P1 品牌: 备注:这里有BFR181多少钱,2025年最近7天走势,今日出价,今日竞价,BFR181批发/采购报价,BFR181行情走势销售排行榜,BFR181报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BFR181

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

SIEMENS

西门子

BFR181

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

Infineon

英飞凌

BFR181

NPN Silicon RF Transistor

文件:133.44 Kbytes Page:7 Pages

Infineon

英飞凌

BFR181

Low Noise Silicon Bipolar RF Transistor

文件:619.16 Kbytes Page:6 Pages

Infineon

英飞凌

BFR181

低噪声RF 管基

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

Infineon

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

VishayVishay Siliconix

威世科技

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

VishayVishay Siliconix

威世科技

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

VishayVishay Siliconix

威世科技

NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report

Infineon

英飞凌

NPN Silicon RF Transistor

文件:133.44 Kbytes Page:7 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:619.16 Kbytes Page:6 Pages

Infineon

英飞凌

Silicon NPN Planar RF Transistor

VishayVishay Siliconix

威世科技

低噪声RF 管基

Infineon

英飞凌

NPN Silicon RF Transistor

文件:510.37 Kbytes Page:6 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:672.64 Kbytes Page:6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

文件:510.37 Kbytes Page:6 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:672.64 Kbytes Page:6 Pages

Infineon

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 射频

Infineon

英飞凌

Unbased Lens-End Lamps

Unbased Lens-End Lamps Unbased Lamps

GILWAY

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

MINIATURE FUSES - 5x20 mm

文件:88.23 Kbytes Page:2 Pages

Littelfuse

力特

Combination of Thin, Flexible, Solid Cu Conductors embedded between layers of Tough

文件:545.49 Kbytes Page:2 Pages

ARIES

INSERT, THRU, REGULAR HEAD STYLE

文件:20.31 Kbytes Page:1 Pages

WITTEN

BFR181产品属性

  • 类型

    描述

  • 型号

    BFR181

  • 制造商

    Infineon Technologies AG

  • 功能描述

    RF Transistor NPN 12V 20mA SOT23

更新时间:2025-9-26 20:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
SOT-323
93000
只有原装正品假一赔十
Infineon(英飞凌)
24+
NA/
8735
原厂直销,现货供应,账期支持!
INFINEON/英飞凌
25+
SOT-23
54648
百分百原装现货 实单必成
INFINEON/英飞凌
24+
SOT-323
5000
全新原装正品,现货销售
VISHAY/威世
25+
SOT-23
47313
VISHAY/威世全新特价BFR181T-GS08即刻询购立享优惠#长期有货
INFINEON/英飞凌
24+
SOT23
159708
明嘉莱只做原装正品现货
INFINEON
24+
SOT-323
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
INFINEON
0038+
SOT23
9000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
23+
SOT23-3
50000
只做原装正品
Infineon
原厂封装
9800
原装进口公司现货假一赔百

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