BFG2晶体管资料

  • BFG23别名:BFG23三极管、BFG23晶体管、BFG23晶体三极管

  • BFG23生产厂家:英国Mullard有限公司

  • BFG23制作材料:Si-PNP

  • BFG23性质:甚高频 (VHF)_超高频/特高频 (UHF)_宽频带放大

  • BFG23封装形式:贴片封装

  • BFG23极限工作电压:15V

  • BFG23最大电流允许值:0.035A

  • BFG23最大工作频率:5GHZ

  • BFG23引脚数:4

  • BFG23最大耗散功率

  • BFG23放大倍数

  • BFG23图片代号:G-129

  • BFG23vtest:15

  • BFG23htest:5000000000

  • BFG23atest:0.035

  • BFG23wtest:0

  • BFG23代换 BFG23用什么型号代替:BFQ75,BFQ76,

BFG2价格

参考价格:¥2.3115

型号:BFG21W,115 品牌:NXP 备注:这里有BFG2多少钱,2025年最近7天走势,今日出价,今日竞价,BFG2批发/采购报价,BFG2行情走势销售排行榜,BFG2报价。
型号 功能描述 生产厂家 企业 LOGO 操作

UHF power transistor

DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APP

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA ● Power amplifiers for DECT and PCN systems ● Integrated emitter ballast resistor ● fT = 5.5 GHz

Infineon

英飞凌

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

Philips

飞利浦

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

Philips

飞利浦

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

Philips

飞利浦

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistor

ETC

知名厂家

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

Philips

飞利浦

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

Philips

飞利浦

封装/外壳:SC-82A,SOT-343 包装:卷带(TR) 描述:RF TRANS NPN 4.5V 18GHZ CMPAK-4 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

UHF power transistor

文件:234.47 Kbytes Page:11 Pages

Philips

飞利浦

UHF power transistor

文件:94.72 Kbytes Page:12 Pages

JMNIC

锦美电子

UHF power transistor

文件:94.72 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN Silicon RF Transistor

文件:63.72 Kbytes Page:6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

Infineon

英飞凌

NPN Silicon RF Transistor

文件:63.72 Kbytes Page:6 Pages

Infineon

英飞凌

NPN 5 GHz宽频带晶体管

ETC

知名厂家

NPN 5 GHz wideband transistor

ETC

知名厂家

封装/外壳:SOT-343 反向插针 包装:卷带(TR) 描述:RF TRANS NPN 5V 5GHZ 4SO 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

NPN 5 GHz wideband transistor

文件:105.18 Kbytes Page:12 Pages

JMNIC

锦美电子

NPN 5 GHz wideband transistor

文件:105.18 Kbytes Page:12 Pages

JMNIC

锦美电子

BFG2产品属性

  • 类型

    描述

  • 型号

    BFG2

  • 制造商

    NXP Semiconductors

  • 功能描述

    BFG21W UHF power transistor

更新时间:2025-12-26 13:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP/微芯
2406+
33600
诚信经营!进口原装!量大价优!
恩XP
23+
NA
10658
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
PHI
23+
SOT-343
3000
原装正品假一罚百!可开增票!
恩XP
22+
N/A
10000
现货,原厂原装假一罚十!
恩XP
25+
N/A
6000
原装,请咨询
PHI
2023+
SMD
776
安罗世纪电子只做原装正品货
恩XP
24+
标准封装
36532
全新原装正品/价格优惠/质量保障
恩XP
24+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
24+
SOT-343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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