位置:首页 > IC中文资料第766页 > BFG235

BFG235晶体管资料

  • BFG235别名:BFG235三极管、BFG235晶体管、BFG235晶体三极管

  • BFG235生产厂家:德国西门子AG公司

  • BFG235制作材料:Si-NPN

  • BFG235性质:超高频/特高频 (UHF)_宽频带放大 (A)

  • BFG235封装形式:贴片封装

  • BFG235极限工作电压:20V

  • BFG235最大电流允许值:0.3A

  • BFG235最大工作频率:6GHZ

  • BFG235引脚数:3

  • BFG235最大耗散功率

  • BFG235放大倍数

  • BFG235图片代号:H-99

  • BFG235vtest:20

  • BFG235htest:6000000000

  • BFG235atest:0.3

  • BFG235wtest:0

  • BFG235代换 BFG235用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
BFG235

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz

SIEMENS

西门子

BFG235

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA ● Power amplifiers for DECT and PCN systems ● Integrated emitter ballast resistor ● fT = 5.5 GHz

INFINEON

英飞凌

BFG235

NPN Silicon RF Transistor

NPN Silicon RF Transistor\n● For low-distortion broadband output amplifier\n   stages in antenna and telecommunication\n   systems up to 2 GHz at collector currents from\n   120 mA to 250 mA\n● Power amplifiers for DECT and PCN systems\n● Integrated emitter ballast resistor\n● fT = 5.5 GHz

INFINEON

英飞凌

BFG235

NPN Silicon RF Transistor

文件:63.72 Kbytes Page:6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:63.72 Kbytes Page:6 Pages

INFINEON

英飞凌

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

PHILIPS

飞利浦

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

PHILIPS

飞利浦

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

NTE

Precision Temperature Sensors

文件:291.37 Kbytes Page:14 Pages

NSC

国半

Precision Temperature Sensors

文件:291.37 Kbytes Page:14 Pages

NSC

国半

BFG235产品属性

  • 类型

    描述

  • 型号

    BFG235

  • 制造商

    Infineon Technologies AG

  • 功能描述

    TRANSISTOR NPN RF SOT-223

更新时间:2026-5-14 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LNFINEON
24+
SOT223
64580
原装现货假一赔十
Infineon/英飞凌
20+
SOT-223
200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infieon
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON/英飞凌
2223+
SOT223
26800
只做原装正品假一赔十为客户做到零风险
INFINEON/英飞凌
2022+
SOT223
42560
原厂代理 终端免费提供样品
Infineon
2025+
SOT-223
5425
全新原厂原装产品、公司现货销售
PHI
2023+
SOT223
5800
进口原装,现货热卖
INFINEON/英飞凌
24+
SOT223-4
9600
原装现货,优势供应,支持实单!
25+
66880
原装正品,欢迎询价

BFG235数据表相关新闻

  • BFHK-1982+

    BFHK-1982+

    2023-3-22
  • BFG235

    进口代理

    2022-11-12
  • BFC233920474

    BFC233920474

    2022-10-13
  • BFP640

    BFP640INFINEON/英飞凌900019+SOT343原盘原标 一罚十优势现货

    2021-9-17
  • BF862215

    JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射

    2020-8-5
  • BF998,现货销售,只售原装,兴中扬电子

    BF998,现货销售,只售原装,兴中扬电子

    2019-11-30