AM/FM Transistor

AM/FM Transistor NPN Silicon

NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • AM mixers • IF amplifiers in AM/FM receivers.

NPN RF Transistor

NPN RF Transistor

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching and Amplification.

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors designed for emitter-grounded AM and FM amplifier stages Plastic case =JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors designed for emitter-grounded AM and FM amplifier stages Plastic case =JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications

230V IP44 24W BF LED Bulkhead 400mm 1600lm 6000K

DESCRIPTION 230V IP44 24W BF LED Bulkhead 400mm 1600lm 6000K

230V IP44 24W BF LED Emergency Bulkhead 400mm 1600lm 6000K

DESCRIPTION 230V IP44 24W BF LED Emergency Bulkhead 400mm 1600lm 6000K

230V IP44 24W BF LED Emergency Bulkhead with Sensor 400mm 1600lm 6000K

DESCRIPTION 230V IP44 24W BF LED Emergency Bulkhead with Sensor 400mm 1600lm 6000K

230V IP44 24W BF LED Bulkhead with Sensor 400mm 1600lm 6000K

DESCRIPTION 230V IP44 24W BF LED Bulkhead with Sensor 400mm 1600lm 6000K

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

N-Channel junction field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-Channel Amplifiers

N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

N-CHANNEL JUNCTION FET

DESCRIPTION BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

N-Channel junction field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-Channel Amplifiers

N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

IM-Channel Junction Field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-channel silicon field-effect transistors

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

N-Channel junction field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-Channel Amplifiers

N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

IM-Channel Junction Field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-channel silicon field-effect transistors

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

IM-Channel Junction Field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-channel silicon field-effect transistors

N-Channel junction field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-Channel Amplifiers

N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

Matt Brass Bezel for 24W LED Bulkhead 400mm

DESCRIPTION Matt Brass Bezel for 24W LED Bulkhead 400mm

Chrome Bezel for 24W LED Bulkhead 400mm

DESCRIPTION Chrome Bezel for 24W LED Bulkhead 400mm

White Bezel for 24W LED Bulkhead 400mm

DESCRIPTION White Bezel for 24W LED Bulkhead 400mm

BF LED Plate 24W 4000K

DESCRIPTION BF LED Plate 24W 4000K